Semiconductor laser with lateral injection

Details Semiconductor laser with lateral injection Semiconductor laser with lateral injection

1984-11-14

1987-02-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

046445536

ABSTRACT:
In a semiconductor laser with iso-electronic doping or with a quantum-well structure, efficiency is considerably increased by lateral injection. For this purpose, the active region is composed of active layers and barrier layers which are laterally bounded by semiconductor zones preferably degenerate, which inject charge carriers in the longitudinal direction of the active layers. The population inversion in the active layers is further increased in that superinjection occurs at the transition with the degenerate zones.

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