Semiconductor laser with large bandgap connection layer

Details Semiconductor laser with large bandgap connection layer Semiconductor laser with large bandgap connection layer

1988-06-20

1990-02-20

Mintel, William

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 56, 372 74, 372 44, 372 43, H01L 3300

Patent

active

049030884

ABSTRACT:
A semiconductor device for producing electro-magnetic radiation consisting of a radiation-emitting element (LED or laser) and an injection element, which can inject hot charge carriers into the active layer of the radiation-emitting element composed of layers of one conductivity type. With the use of active layers having a large band gap, for example GaN, short-wave light can be generated. According to the invention, the radiation-emitting element and the injection element constitute parts of the same epitaxial layer structure, the active layer being connected to the injection element by means of a semiconductor connection layer having a band gap larger than that of the active layer and that of the adjoining layer of the injection element.

REFERENCES:
patent: 4149174 (1979-04-01), Shannon
patent: 4631731 (1986-12-01), Wolter et al.
patent: 4740976 (1988-04-01), Kajimura et al.
patent: 4750183 (1988-06-01), Takahashi et al.
patent: 4794606 (1988-12-01), Kondow et al.

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