Semiconductor laser with kink suppression layer

Details Semiconductor laser with kink suppression layer Semiconductor laser with kink suppression layer

1997-12-31

2000-10-31

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 3085

Patent

active

061413658

ABSTRACT:
A kink suppression technique is disclosed in which optical characteristics of a distributed feedback laser diode's resonant cavity are controlled to preferentially prevent establishment of higher order lateral modes. This results in increased kink powers and thus the useful power range of the device. Specifically, an optical layer, preferably silicon or titanium, is disposed along the optical axis, on the etched upper cladding layer, and on both sides of the ridge.

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