Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1992-08-03
1994-06-21
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257197, 257 83, 372 45, 372 50, H01L 3112
Patent
active
053230264
ABSTRACT:
A diode laser of the buried heterostructure type with transverse injection and a lateral bipolar transistor structure are monolithically and coaxially formed in the same set of semiconductor layers to make an integral laser device that emits a constant level of optical power stabilized against unpredictable variations. The base region of the transistor structure is formed coaxially with the laser waveguide, so that laser power passes into or through the transistor base. Electrical feedback is provided from the transistor to the laser via a resistor between the collector of the transistor and the anode of the laser, thereby controlling the current delivered by an external current source to the laser.
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Hille Rolf
Kelly John M.
Small Jonathan A.
Tran Minhloan
Xerox Corporation
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