Semiconductor laser with end zones for reducing non-radiating re

Details Semiconductor laser with end zones for reducing non-radiating re Semiconductor laser with end zones for reducing non-radiating re

1982-08-27

1985-12-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 49, 357 17, H01S 319

Patent

active

045584486

ABSTRACT:
A semiconductor laser having mirror faces serving as resonators, in which the active laser region includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces, so that mirror erosion is avoided.

REFERENCES:
patent: 3838359 (1974-09-01), Hakki et al.
patent: 4309668 (1982-01-01), Ueno et al.

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