Semiconductor laser with crystalline window layer

Details Semiconductor laser with crystalline window layer Semiconductor laser with crystalline window layer

1996-01-22

1997-10-14

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

056779224

ABSTRACT:
A semiconductor laser according to the invention includes a compound semiconductor substrate having a surface with a first crystalline orientation; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and having a second crystalline orientation; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate.

REFERENCES:
patent: 4122407 (1978-10-01), Van Vechten
patent: 5228047 (1993-07-01), Matsumoto et al.
patent: 5294815 (1994-03-01), Iechi
patent: 5357123 (1994-10-01), Sugawara
Wada et al, "A New Chemical Etching Technique for Formation of Cavity Facets of GaAlAs Lasers", IEEE Journal of Quantum Electronics, vol. QE-21, No. 6, pp. 658-662 Jun. 1985.
Wada et al., "A New Chemical Etching Technique for Formation of Cavity Facets of (GaAl)As Lasers", IEEE Journal of Quantum Electronics, vol. QE-21, No. 6, Jun. 1985, pp. 658-662.
Suematsu et al., "Handbook of Semiconductor Lasers and Photonic Integrated Circuits", Chapman & Hall, London, 1994, pp. 317-319. (No Month).

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