Semiconductor laser with constant differential quantum efficienc

Details Semiconductor laser with constant differential quantum efficienc Semiconductor laser with constant differential quantum efficienc

1988-08-24

1989-06-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 31, H01S 319

Patent

active

048399019

ABSTRACT:
A semiconductor laser is disclosed whose front or rear surface is provided with a multilayer dielectric and/or reflective coating in such a way that either a temperature-independent differential quantum efficiency or a temperature-independent power output is obtained. The sequence of layers is chosen so that the reflection coefficient decreases with increasing light wavelength. (In other laser systems, it may be necessary for the reflection coefficient to increase).

REFERENCES:
patent: 4092659 (1978-05-01), Ettenberg

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