Semiconductor laser with complementary mesa structures

Details Semiconductor laser with complementary mesa structures Semiconductor laser with complementary mesa structures

1986-02-06

1988-04-12

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 44, H01S 319

Patent

active

047379618

ABSTRACT:
A semiconductor laser has a semiconductor substrate with a feature on its surface. The feature, either a projection or a groove, forms a mesa or a mesa groove having relatively sharp edges. Active layers and cladding layers are deposited on this seimconductor substrate. The cladding layer deposited directly on the semiconductor substrate has at least one slope opposite the mesa or mesa groove, on which slope no active layer is formed during epitaxial growth. The active layer immediately above the cladding layer is prevented from depositing on the slope of the cladding layer so that no etching process for removing sections of the active layer is necessary. This allows deposition of the active layers and cladding layers on the semiconductor substrate in an uninterrupted sequence of single epitaxial growth steps.

REFERENCES:
patent: 4099305 (1978-07-01), Cho et al.
patent: 4215319 (1980-07-01), Botez
patent: 4429397 (1984-01-01), Sugimoto et al.
patent: 4647953 (1987-03-01), Okajima et al.
Kishino et al., "Mesa-Substrate Buried-Heterostructure GaInAsP/InP Injection Lasers", Electronics Letters, vol. 15, No. 4, Feb. 15, 1979, pp. 134-136.

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