Semiconductor laser with COD preventing disordered regions

Details Semiconductor laser with COD preventing disordered regions Semiconductor laser with COD preventing disordered regions

1993-11-10

1995-11-21

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 46, H01S 318, H01S 3085

Patent

active

054694574

ABSTRACT:
A semiconductor laser includes: a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer disposed on the substrate; a quantum well structure disposed on the lower cladding layer; a second conductivity type upper cladding disposed on the quantum well structure; a ridge including a stripe-shaped second conductivity type semiconductor of a length extending in the laser resonator length direction reaching neither semiconductor laser facet and disposed on the upper cladding layer; disordered regions, i.e, window structures, formed in the quantum well structure in the vicinity of the laser resonator facets by ion-implanting a dopant impurity; and a first conductivity type current blocking layer, disposed on the upper cladding layer on the disordered quantum well structure layer, burying the ridge. Accordingly, in the window structure regions, flow of a current that does not produce laser light is prevented, resulting in a semiconductor laser having a high power light output, a low threshold current, and a low operational current.

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Thornton et al., "High Power (2.1 W) 10-Stripe AlGaAs Laser Arrays With Si Disordered Facet Windows", Applied Physics Letter 49 (23), Dec. 8, 1986, pp. 1572-1574.
Kuroi et al., "Characteristics of Junction Leakage Current of Buried Layer Formed by High Energy Ion Implantation", Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 441-444 no month.

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