Semiconductor laser with buffer layer

Details Semiconductor laser with buffer layer Semiconductor laser with buffer layer

1980-02-19

1982-07-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

043409660

ABSTRACT:
A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

REFERENCES:
patent: 4258375 (1981-03-01), Hsieh et al.
Oe et al, "GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus", Japan J. Appl. Phys. vol. 15 (1976) No. 10, pp. 2003-2004.
Nagai et al, "InP-Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y Double Heterostructure for 1.5 .mu.m Wavelength" App. Phys. Lett. 32(4), Feb. 15, 1978, pp. 234-236.
Arai et al, "Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 .mu.m", Jpn. J. Appl. Phys., vol. 18, Dec. 1979, No. 12, pp. 2333-2334.

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