Semiconductor laser with broad-area intra-cavity angled grating

Details Semiconductor laser with broad-area intra-cavity angled grating Semiconductor laser with broad-area intra-cavity angled grating

1993-07-27

1994-08-09

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 96, 372102, 372 99, H01S 319

Patent

active

053373286

ABSTRACT:
A semiconductor laser includes a grating that is disposed at an angle to cavity reflectors to coherently diffract a beam of light along a path that is at least partially laterally directed within the cavity. The grating period and orientation are selected such that a specified wavelength of the light beam propagating along the path will resonate for light that impinges upon the end reflectors at normal incidence. By keeping the angle of incidence of the light beam upon the grating greater than about 45 degrees, reflectivity of the grating is maximized and the required grating period is larger thereby simplifying the fabrication of the grating.

REFERENCES:
patent: 4658403 (1987-04-01), Takiguchi et al.
patent: 5103456 (1992-04-01), Scifres et al.

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