Semiconductor laser with alinp or algainp burying layer

Details Semiconductor laser with alinp or algainp burying layer Semiconductor laser with alinp or algainp burying layer

1995-01-24

1996-06-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

055286178

ABSTRACT:
A semiconductor laser having improved reliability. The laser contains an AlGaInP first cladding layer of a first conductivity type, an AlGaInP second cladding layer of a second conductivity type that forms a mesa stripe, an active layer made of an undoped GaInP layer, an undoped AlGaInP layer, or a quantum well layer of an undoped GaInP sublayer and an undoped AlGaInP sublayer. The laser further contains a burying layer made of an Al.sub.x In.sub.1-x P or (Al.sub.y Ga.sub.1-y).sub.x In.sub.1-x P layer, which is placed at both sides of the mesa stripe to bury the stripe. The burying layer is larger in energy band gap than the active layer and smaller in refractive index than the second cladding layer. The burying layer has first regions that are contacted with and extend along respective side faces of the mesa stripe. An Al composition x of the first regions is set so that the first regions are lattice-matched to GaAs. The burying layer has second regions that are joined with respective bottom ends of the first regions and extend along the active layer. An Al composition x of the second regions is set so that the second regions are lattice-matched or are not lattice-matched to GaAs.

REFERENCES:
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N. Buchan et al, Compositional Variation and Ordering of Ga.sub.x In.sub.1-x P on Gatts Structured Substrates, 21 Dec. 1992, Appl. Phys. Lett. 61 (25), pp. 2996-2998 (copy in file).
Kawata et al, Room-Temperature Continuous-Wave Operation of a 640 nm AlGalnP Visible-Light Semiconductor Laser Electronics Letter vol. 23 No. 24, pp. 1327-1328, Nov. 19, 1987.
Novel selective area growth of AiGaAs and AlAs with HCI gas by MOVPE, by K. Shimoyama et al Journal of Crystal Growth 124 (1992) pp. 235-242, 1992 (No Month).
A Real-Index Guided inGaAlP Visible Laser Diode with a Small Beam Astigmatism, by Masaki Okajima, et al. IEEE Journal of Quantum Electronics vol. 27, No. 6 Jun. 1991.
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