Semiconductor laser with active layer having reduced stress

Details Semiconductor laser with active layer having reduced stress Semiconductor laser with active layer having reduced stress

1983-04-05

1986-05-27

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 36, 372 48, H01S 319

Patent

active

045920605

ABSTRACT:
A GaAs semiconductor laser includes a GaAs semiconductor laser element, and a Cu heat sink attached to the GaAs semiconductor laser element through the use of an In solder. The GaAs semiconductor laser element includes an active layer sandwiched by cladding layers, and a substrate upon which various layers are formed. The GaAs semiconductor laser element is constructed so that the active layer is separated from the mounted surface by at least a distance which corresponds to about 32 to 35% of the entire thickness of the GaAs semiconductor laser element, thereby minimizing the stress applied to the active layer.

REFERENCES:
T. Kajimura, J. Appl. Phys 51(2), Feb. 1980, pp. 908-913.
T. Hayakawa et al., Applied Physics Letters, vol. 42, No. 1, Jan. 1, 1983.
W. B. Joyce et al., "Thermal Resistance of Heterostructure Lasers", Journal of Applied Physics, vol. 46, No. 2, Feb. 1975, pp. 855-862.

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