Semiconductor laser with active layer having a radiation emittin

Details Semiconductor laser with active layer having a radiation emittin Semiconductor laser with active layer having a radiation emittin

1987-10-06

1989-04-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 92, 372108, H01S 319

Patent

active

048192430

ABSTRACT:
A semiconductor laser having a layer structure including a first and a second passive layer of opposite conductivity types, an active layer therebetween which forms a pn junction with one of the passive layers, and a current-limiting blocking layer which forms a reverse-biased pn junction bounding a radiation emitting active region of the active layer. The active region has a thickness which exceeds that of the remainder of the active layer, and extends through the blocking layer at least as far as the other passive layer. This achieves effective electrical and optical confinement of the active region, enabling a sufficiently low threshold current for laser operation at room temperature.

REFERENCES:
patent: 4581744 (1986-04-01), Takamiya et al.
patent: 4675875 (1987-06-01), Takamiya
patent: 4675876 (1987-06-01), Svilans
patent: 4706101 (1987-11-01), Nakamura et al.

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