Coherent light generators – Particular active media – Semiconductor
Patent
1987-02-13
1989-04-18
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 20, 372 50, H01S 319
Patent
active
048233528
ABSTRACT:
An improved semiconductor laser comprises an active region of quantum well, at least two cladding layers positioned at both sides of said active region, and two electrodes provided separately at one side of at least one cladding layer of said at least two cladding layers so that a laser oscillation is produced in a wide wavelength range and high response rate for the reason why the wavelength of a laser oscillation can be changed in wavelengths in the vicinity of transition energy E.sub.ke-HH between n=k electron quantum and n=k heavy hole quantum level (k=1, 2, 3 - - - ) in accordance with the control of current to be injected from one electrode of said two electrodes or voltage to be applied to said one electrode.
REFERENCES:
Yamaguchi et al., "Wide Range Wavelength Tuning in 1.3 .mu.m DBR-DC-PBH-LD's by Current Injection Into the DBR Region", Electronics Letters, Jan. 17, 1985, vol. 21, No. 2, pp. 63-65.
Arakawa et al., "Active Q-switching in a GaAs/AlGaAs Multiquantum Well Laser with an Intracavity Monolithic Loss Modulator", Appl. Phys. Lett., vol. 48, No. 9, Mar. 3, 1986, pp. 561-563.
Epps Georgia Y.
NEC Corporation
Sikes William L.
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