Semiconductor laser with a controllable transmittance layer

Details Semiconductor laser with a controllable transmittance layer Semiconductor laser with a controllable transmittance layer

1986-12-01

1988-07-26

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 49, 372 50, 372108, H01S 319

Patent

active

047605782

ABSTRACT:
In a semiconductor laser, an active layer and a pair of cladding layers sandwiching therebetween the active layer are provided to be parallel to the plane of the substrate to form a light waveguide passage, and light from the light waveguide passage is guided toward the substrate by reflecting the same at reflecting layers formed of dielectric with the active layer and the cladding layers being cut to have slopes inclined at approximately 45 degrees with respect to the plane of the substrate. A multiquantum well layer is provided so as to change the transmittance thereof by the change of applied electric field providing extremely high speed modulation. One or more through-holes may be made in the substrate so as to derive output light therethrough. One or more of the through-holes may be filled with a reflection layer so as to selectively reflect particular wavelength light, and thus by using a plurality of such laser chips, oscillation at different wavelengths is possible.

REFERENCES:
patent: 3996528 (1976-12-01), Blum et al.
patent: 4053914 (1977-10-01), Goodwin
patent: 4216485 (1980-06-01), Page
patent: 4633476 (1986-12-01), Scifres et al.
"Stable Longitudinal-Mode InGaAsP/InP Internal-Reflection-Interference Laser" by Masaaki Ohshima et al; IEEE Journal of Quantum Electronics, vol. Qe-21, No. 6, Jun. 1985, pp. 563-567.
Dupuis et al., "Room-Temperature Operation of Distributed-Bragg-Confinement Ga.sub.1 -x Al.sub.x As-GaAs Laser Grown by Metalorganic Chemical Vapor Deposition".

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