Semiconductor laser that generates second harmonic light with at

Details Semiconductor laser that generates second harmonic light with at Semiconductor laser that generates second harmonic light with at

1993-11-22

1995-02-14

Scott, Jr., Leon

Coherent light generators

Particular resonant cavity

372 45, 372 21, 372 22, 437129, H01S 308

Patent

active

053902106

ABSTRACT:
A semiconductor laser with a nonlinear crystal that generates second harmonic light at a frequency which is twice the fundamental frequency of the laser. The laser is configured in a vertical-cavity, surface-emitting structure or an edge-emitting structure. A nonlinear crystal is attached to a semiconductor optical amplifier by fusing with wafer bonding techniques or by epitaxially growing the nonlinear crystal on the amplifier. The amplifier and the nonlinear crystal are located inside a laser cavity that is defined between a pair of reflectors. One of the reflectors is located adjacent the nonlinear crystal and is highly reflective at the fundamental frequency but transmissive at twice the fundamental frequency. Light is generated at the fundamental frequency, doubled in frequency as it passes back and forth through the nonlinear crystal, and emitted through the reflector adjacent the nonlinear crystal. An optional region between the amplifier and the nonlinear crystal prevents reflections at the fundamental frequency or prevents light at twice the fundamental frequency from propagating from the nonlinear crystal into the amplifier.

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M. J. Angell et al., "Orientation Patterning of II-VI Semiconductor Films for Quasi-phasematched Nonlinear Devices", Optical Society of America, 1992 Technical Digest Series, vol. 10, Mar. 22-24, 1993, Palm Springs, California.
R. J. Ram, et al., "analysis of Wafer Fusing of 1.3um Vertical Cavity Surface Emitting Lasers", Appl. Phys. Lett. 62 (20), 17 May 1993, pp. 2474-2476.
D. Vakhshoori et al., "Blue-Green Surface-Emitting Second Harmonic Generators on (111)B GaAs", Appl. Phys. Lett. 59(8), 19 Aug. 1991, pp. 896-898.
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J. J. Dudley et al., "Low Threshold, electrically injected InGaAsP (1.3 um) Vertical Cavity Lasers on GaAs Substrates", 51st Annual Device Research Conference, Jun. 21-23, 1993, University of California, Santa Barbara, California, IEEE Electron Devices Society.
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