Semiconductor laser structure for improved stability of the thre

Details Semiconductor laser structure for improved stability of the thre Semiconductor laser structure for improved stability of the thre

1994-05-10

1996-01-09

Jackson, Jerome

Coherent light generators

Particular active media

Semiconductor

257 13, 257 18, 257 22, 257 97, 257103, H01L 310304, H01L 3300, H01S 319

Patent

active

054835470

ABSTRACT:
A Type II heterojunction formed of semiconductor material which normally forms a Type I heterojunction. The Type II heterojunction is created by using a carefully chosen stack of epitaxial semiconductor materials with modifications to the band structure through quantum mechanical confinement effects. This virtual type II heterojunction is incorporated adjacent to the active region in a single-quantum-well, ridge-waveguide laser structure. An anomalous "Negative-T.sub.o " region is observed in which threshold current decreases with increasing temperature. A reduction in the temperature sensitivity of the threshold current of the laser structure results.

REFERENCES:
patent: 5091756 (1992-02-01), Iga et al.
patent: 5251224 (1993-10-01), Irikawa
Corzine et al. Appl. Phys. Lett. 59(5) 29 Jul. 1991 "Theoretical in wells" pp. 588-590.
"Semiconductor Quantum Wells as Electron Wave Slab Waveguides", Gaylord et al., J. Appl. Phys. 66(4), Aug. 15, 1989, pp. 1842-1848.
"Semiconductor Electron-Wave Slab Waveguides", Gaylord et al., J. Appl. Phys. 66(3), Aug. 1, 1989, pp. 1483-1485.
"Carrier Dynamics and Recombination Mechanisms in Staggered-Alignment Heterostructures", IEEE Journal of Quantum Electronics, vol. 24, No. 8, Aug. 1988, pp. 1763-1777.

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