Semiconductor laser structure

Details Semiconductor laser structure Semiconductor laser structure

1983-12-01

1986-12-23

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 319

Patent

active

046317295

ABSTRACT:
A semiconductor laser array structure operable at relatively high powers and high brightness levels compared with prior laser arrays. At least two principal lasing regions are formed in a single active layer of the structure, and are closely coupled by an intermediate region in which there is optical gain. Preferably, the dimensions of the structure are selected to provide single-filament lasing in the principal lasing regions and in the intermediate region, resulting in a composite output that is apparently phase-locked and has a high-brightness, single-lobe far-field radiation distribution pattern with a low divergence angle. The disclosed structure uses gallium arsenide and gallium aluminum arsenide materials and is fabricated using liquid-phase epitaxy. Longitudinal mode selection in the device may be accomplished by configuring the two channels to produce different sets of longitudinal modes, the close coupling of the two regions resulting in the output of only those modes common to both regions.

REFERENCES:
patent: 4255717 (1981-03-01), Scifres et al.
patent: 4382265 (1983-05-01), Pearsall

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