Coherent light generators – Particular beam control device – Modulation
Patent
1989-09-06
1991-04-09
Davie, James W.
Coherent light generators
Particular beam control device
Modulation
372 50, H01S 310
Patent
active
050070622
ABSTRACT:
A semiconductor laser (2) constitutes a monolithic source whose intensity is modulated at a frequency lying in the microwave frequency range, typically 10-20 GHz to 100 GHz. It is based on coupling between the longitudinal modes of the laser, with intensity modulation being given by beats between the various modes of the laser. Optimization and control of the laser are made possible by splitting the optical cavity (6, 8, 10) of the laser into successive sections (20, 22, 24). The invention is particularly suitable for telecommunications applications.
REFERENCES:
patent: 4719636 (1988-01-01), Yamaguchi
patent: 4720835 (1988-01-01), Akiba et al.
patent: 4852108 (1989-07-01), Utaka et al.
Korotky et al., "Optical Intensity Modulation to 40 GHz Using a Waveguide Electro-Optic Switch", Appl. Phys. Lett., vol. 50, No. 23, pp. 1631-1633 (1987).
Goldberg et al., "35 GHz Microwave Signal Generation with an Injection-Locked Laser Diode", Electronics Letters, vol. 21, No. 18, pp. 814-815 (1985).
New: "The Generation of Ultrashort Laser Pulses", Rep. Prog. Phys. vol. 46, pp. 877-971 (1983).
Rush et al., "The Linewidth of a Mode-Locked Semiconductor Laser Caused by Spontaneous Emission . . . ", IEEE Journal of Quantum Elec., vol. 32, No. 11, (1986).
Goodwin et al., "Modulation Detuning Characteristics of Actively Mode-Locked Diode Lasers", IEEE Journal of Quantum Electronics, vol. 19, No. 6 (1983).
Coldren et al., "Continuously-Tunable Single-Frequency Semiconductor Lasers", IEEE Journal of Quantum Electronics, vol. 23, No. 6 (1987).
"Passive and Active Mode Locking of a Semiconductor Laser Without an External Cavity", Applied Physics Letters, vol. 46, No. 12, 15 Jun. 1985, K. Y. Lau et al.
"Dispersion of the Group Velocity Refractive Index in GaAs Double Heterostructure Lasers", IEEE Journal of Quantum Electronics, vol. QE-19, No. 2, Feb. 1983, pp. 164-168, J. P. Van Der Ziel et al.
"Spectral Characteristics for a 1.5 .mu.m DBR Laser with Frequency-Tuning Region", IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, S. Murata et al., pp. 835-838.
"1.55 .mu.m Wavelength Tunable FBH-DBR Laser", Electronic Letters, vol. 23, No. 7, 26 Mar. 1987, Y. Kotaki et al., pp. 325-327.
"Multielectrode Distributed Feedback Laser for Pure Frequency Modulation and Chirping Suppressed Amplitude Modulation", Journal of Lightwave Technology, vol. LT-5, No. 4, Apr. 1987, pp. 516-522, Y. Yoshikuni et al.
"Modelocking of Semiconductor Laser Diodes", Japanese Journal of Applied Physics, vol. 20, No. 6, Jun. 1981, pp. 1007-1020, H. A. Haus.
"Bandwidth-Limited Picosecond Pulse Generation in an Actively Mode-Locked GaAs Laser with Intracavity Chirp Compensation", Optics Letters, vol. 12, No. 5, May 1987, pp. 334-336, Optical Society of America, N.Y., J. Kuhl et al.
"Spectral Dependence of the Change in Refractive Index Due to Carrier Injection in GaAs Lasers", Journal of Appl. Phys., vol. 52, No. 7, Jul. 1981, C. H. Henry.
ALCATEL N.V.
Davie James W.
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