Semiconductor laser screen of a cathode-ray tube

Details Semiconductor laser screen of a cathode-ray tube Semiconductor laser screen of a cathode-ray tube

1992-04-30

1994-05-31

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053175832

ABSTRACT:
A laser screen of a cathode-ray tube has a semiconductor member made of a semiconductor material selected from the group consisting of an A.sup.II B.sup.VI compound or a solid solution of an A.sup.II B.sup.VI compound and a pair of mirror layers formed on the opposite sides of said semiconductor member. The material of the semiconductor member is doped with a donor impurity in the form of an element of the VII Group of the Periodic Table. A content of the donor impurity ranges from 3.multidot.10.sup.17 to 5.multidot.10.sup.18 cm.sup.-3, and the resistivity of the semiconductor member is maximum 10.sup.-1 .OMEGA./cm.

REFERENCES:
patent: 4539687 (1985-09-01), Gordon et al.
patent: 5081632 (1992-01-01), Migita et al.

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