Semiconductor laser producing visible light

Details Semiconductor laser producing visible light Semiconductor laser producing visible light

1991-06-17

1993-01-05

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

051777576

ABSTRACT:
A semiconductor laser producing visible light includes a first conductivity type semiconductor substrate, a first conductivity type AlGaInP cladding layer containing a first dopant impurity and disposed on the substrate, a semiconductor first spacer layer disposed on the cladding layer, an undoped InGaP active layer disposed on the first spacer layer wherein the first spacer layer inhibits intrusion of the first dopant impurity into the active layer, a semiconductor second spacer layer disposed on the active layer, a second conductivity type AlGaInP light guide layer containing a second dopant impurity and disposed on the active layer wherein the second spacer layer inhibits intrusion of the second dopant impurity into the active layer, a second conductivity type semiconductor current concentration and collection structure disposed on the light guide layer, and first and second electrodes disposed on the substrate and the current concentration and collection structure, respectively.

REFERENCES:
patent: 4922499 (1990-05-01), Nitta et al.
patent: 5023199 (1991-06-01), Murakami et al.
patent: 5042045 (1991-08-01), Sato
Tanaka et al, "Transverse-Mode Stabilized Ridge Stripe AlGaInP Semiconductor Lasers Incorporating A Thin GaAs Etch-Stop Layer", Applied Physics Letters, vol. 54, No. 15, Apr. 1989, pp. 1391-1393.
Gomyo et al, "Evidence For The Existence . . . Band-Gap Energy", Applied Physics Letters, vol. 50, No. 11, 1987, pp. 673-675.

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