Semiconductor laser producing visible light

Details Semiconductor laser producing visible light Semiconductor laser producing visible light

1991-06-18

1992-11-03

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

051611678

ABSTRACT:
A semiconductor laser producing visible light includes a first conductivity type GaAs substrate, a first conductivity type (Al.sub.w Ga.sub.1-w).sub.0.5 In.sub.0.5 P cladding layer disposed on the substrate, a (Al.sub.z Ga.sub.1-z).sub.0.5 In.sub.0.5 P active layer disposed on the first conductivity type cladding layer wherein 0.ltoreq.z<w, a second conductivity type (Al.sub.w Ga.sub.1-w).sub.0.5 In.sub.0.5 P cladding layer having a lattice constant and disposed on the active layer, a first conductivity type In.sub.1-x Ga.sub.x As.sub.1-y P.sub.y current blocking layer disposed on part of the second conductivity type cladding layer wherein y is approximately equal to -2x+2, 0.5.ltoreq.x<1, and 0<y.ltoreq.1 so that the lattice constant of the current blocking layer is substantially the same as the lattice constant of the second conductivity type cladding layer, a current concentration and collection structure in contact with the second conductivity type cladding layer for concentrating current flow in a central part of the active layer, and first and second electrodes disposed in contact with the substrate and current concentration and collection structure, respectively.

REFERENCES:
patent: 4470976 (1988-04-01), Kajimura et al.
patent: 5048037 (1991-09-01), Arimoto et al.
patent: 5105432 (1992-04-01), Murakami et al.
Kawata et al, "Room-Temperature . . . Semiconductor Laser . . . Active Layer", Electronics Letters, vol. 24, No. 24, 1988, pp. 1489-1489.
Tanaka et al, "Transverse-Mode . . . Semiconductor Lasers . . . Etch-Stop Layer", Applied Physics Letters, vol. 54, No. 15, 1989 pp. 1391-1393.
Nitta et al, "Astigmatism in Ridge-Stripe InGaAlP Laser Diodes", Japanese Journal of Applied Physics, vol. 28, No. 11, 1989, L2089-L2091.
Abstract 28-ZG-4 from the Spring 1989 Applied Physics Meeting sponsored by the Japanese Society of Applied Physics.
Ishikawa et al, "InGaAlP Transverse Mode Stabilized Visible Laser Diodes Fabricated By MOCVD Selective Growth", Extended Abstracts of the 18th Conference on Solid State Devices and Materials, Tokyo 1986, pp. 153-156.
Fujii et al, "High-Power Operation . . . Semiconductor Laser", Electronics Letters, vol. 23, No. 18, 1987, pp. 938-939.

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