Semiconductor laser producing short wavelength light

Details Semiconductor laser producing short wavelength light Semiconductor laser producing short wavelength light

1996-03-28

1997-12-23

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, 372 96, H01S 319, H01S 308

Patent

active

057013217

ABSTRACT:
A semiconductor laser includes an electrically insulating substrate having an opening; a first conductivity type first contact layer within the opening; a laminated semiconductor layer structure on the first contact layer and comprising a first cladding layer, an active layer, a second cladding layer, and a second contact layer wherein the first contact layer includes an aperture within the opening; a first electrode disposed on the electrically insulating substrate and extending to and contacting the first contact layer; and a second electrode in electrical contact with the second contact layer. The substrate is preferably sapphire, MgO, and spinel and the semiconductor layers are preferably GaN materials so that the laser emits short wavelength light. An electrode makes direct, reliable contact to the first cladding layer through an opening in the electrically insulating substrate without the need of mechanically working or etching the substrate.

REFERENCES:
patent: 5034954 (1991-07-01), Seiwa
patent: 5038356 (1991-08-01), Botez et al.
patent: 5073892 (1991-12-01), Uomi et al.
patent: 5146465 (1992-09-01), Khan et al.
patent: 5314838 (1994-05-01), Cho et al.
"Fundamental Examination Of GaN-type Surface Light-Emitting Laser", Nitride Semiconductor Seminar, 1994, pp. 55-60 (Dec. 1994).
"Realization Of An High Luminance Blue Light-Emitting Diode", Nikkei Science Journal, vol. 10, 1994, pp. 44-55.

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