Semiconductor laser processing with mirror mask

Details Semiconductor laser processing with mirror mask Semiconductor laser processing with mirror mask

1985-06-28

1987-04-28

Albritton, C. L.

Electric heating

Metal heating

By arc

219121LQ, 219121FS, 427 531, B23K 2600

Patent

active

046616799

ABSTRACT:
A semiconductor processing technique is provided for reacting with the surface (2) of a semiconductor wafer substrate (4) only along a predetermined pattern without a pass-through mask. Excimer pulsed ultraviolet laser radiation (32) is reflected by a mirror (10) having a selective pattern (12) thereon to direct laser radiation only along a predetermined pattern onto the substrate surface (2) as determined by the selective mirror pattern (12), to selectively activate designated areas of the substrate (4). There is further provided a method for forming a predetermined pattern on a cylindrical target (76) by directing excimer pulsed ultraviolet laser radiation (74) along the conical axis of a conical mirror (72) having a selective pattern thereon.

REFERENCES:
patent: 3986767 (1976-10-01), Rexer et al.
patent: 4135902 (1979-01-01), Oehrle
patent: 4156124 (1979-05-01), Macken et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4480169 (1984-10-01), Macken
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4505949 (1985-03-01), Jelks
patent: 4532401 (1985-07-01), Shiozaki et al.

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