Semiconductor laser of visible ray region having window structur

Details Semiconductor laser of visible ray region having window structur Semiconductor laser of visible ray region having window structur

1991-08-21

1992-06-02

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

051193876

ABSTRACT:
A semiconductor laser including a semiconductor substrate having a high resistance region at both ends, an active layer sandwiched between two clad layers, and a window structure having both end surfaces facing each other. Each of the both end surfaces includes end portions of the active layer and the two clad layers, respectively. Since each of the end portions is disposed above the high resistance region of the semiconductor region of the semiconductor substrate, it has a band gap higher than an internal portion of the active layer and the two clad layers, respectively, thereby providing an improved window effect.

REFERENCES:
patent: 5020068 (1991-05-01), Isshiki
patent: 5048037 (1991-09-01), Arimoto et al.

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