Semiconductor laser of modulation doping quantum well structure

Details Semiconductor laser of modulation doping quantum well structure Semiconductor laser of modulation doping quantum well structure

1992-10-08

1994-06-07

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053196570

ABSTRACT:
The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7.times.10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.

REFERENCES:
patent: 4953170 (1990-08-01), Logan et al.
patent: 5073892 (1991-12-01), Uomi et al.
patent: 5193098 (1993-03-01), Welch et al.
patent: 5204871 (1993-04-01), Larkins
patent: 5212705 (1993-05-01), Kahen et al.
Uomi et al., Appl. Phys. Lett. 51 (2), 13 Jul. 1987, pp. 78-80, "Ultrahigh relaxation oscillation frequency . . . ".

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