Semiconductor laser modulation method therefor and optical commu

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 27, 372 50, H01S 319, H01S 310

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057578400

ABSTRACT:
A semiconductor laser includes a distributed feedback semiconductor laser structure having a plurality of regions. The regions are electrically separated from each other. A phase shift section is provided in a grating in one of the regions. In the semiconductor laser, .alpha. parameters for transverse electric (TE) and transverse magnetic (TM) polarization modes, in the vicinity of threshold currents for the TE mode and the TM mode, are made different from each other. An .alpha. parameter is defined by 4.pi./.lambda..multidot.(dn/dN)/(dg/dN) where .lambda. is a Bragg wavelength, n is an effective refractive index, N is an injection carrier density and g is a gain for each of the TE mode and the TM mode.

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Hidenao Tanaka, et al., "Highly efficient TE/TM Mode Switching of GaASP/AIGaAS Strained Quantum-well Laser Diodes", Applied Physics Letters, 64 (1994) 10 Jan., No. 2, pp. 158-160.
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Takahiro Numai, "1.5-.mu.m Wavelength Tunable Phase-Shift Controlled Distributed Feedback Laser", Journal Of Lightwave Technology, 10 (1992) Feb., No. 2, pp. 199-205.

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