Semiconductor laser, modulation method therefor and optical comm

Coherent light generators – Particular beam control device – Mode discrimination

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372 26, 372 27, 372 50, 372 96, H01S 310

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058417990

ABSTRACT:
A semiconductor laser of the present invention includes a semiconductor laser structure having a waveguide extending along a resonance direction, an active layer provided at least partly in the waveguide, and a control unit for controlling the excited state of the semiconductor laser structure to change the relationship between wavelengths or propagation constants and threshold gains for transverse electric (TE) mode and transverse magnetic (TM) mode of the laser structure. The waveguide is designed such that threshold gains for the TE mode and the TM mode can be alternately made minimum under the control of the control unit.

REFERENCES:
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IEEE Photonics Technology Letters, vol. 2, No. 2, Feb. 1, 1990, pp. 139-142, H. Kobrinski, et al., "Simultaneous Fast Wavelength Switching and Intensity Modulation Using a Tunable DBR Laser".
Applied Physics Letters, vol. 64, No. 2, Jan. 10, 1994, pp. 158-160, H. Tanaka, et al., "Highly Efficient TE/TM Mode Switching of GAASP/ALGAAS Strained Quantum-Well Laser Diodes".
IEEE Journal of Quantum Electronics, vol. 27, No. 7, Jul. 1991, pp. 1874-1885, Y. Hori, et al., "Analysis of TE and TM Modes in DFB Lasers By Two-Dimensional Theory".
V. Jayaraman, "Demonstration of broadband tunability in a semiconductor laser using sampled gratings," 60 Appl. Phys. Lett. 2321-23 (May, 1992).
F. Kano, et al., "Broad Range Wavelength Tuning in DBR Lasers with Super Structure Grating (SSG)," Electronics Information Communication Technology, OQE 92-131, pp. 39-44 (Nov., 1992).

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