Semiconductor laser, method of manufacturing semiconductor...

Details Semiconductor laser, method of manufacturing semiconductor... Semiconductor laser, method of manufacturing semiconductor...

2011-01-11

2011-01-11

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S022000, C438S034000, C438S035000, C372S045012, C372S044010, C372S043010

Reexamination Certificate

active

07867798

ABSTRACT:
A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the n-side optical waveguide layer; a p-side optical waveguide layer over the active layer; an electron barrier layer over the p-side optical waveguide layer; and a p-side clad layer over the electron barrier layer. A ridge stripe is formed at an upper part of the p-side optical waveguide layer, the electron barrier layer and the p-side clad layer, and the distance between the electron barrier layer and a bottom surface in areas on both sides of the ridge stripe is not less than 10 nm.

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T. Ohno et al.; Sel-pulsation in InGaN laser diodes with saturable absorber layers; Applied Physics Letters; vol. 83; No. 6; Aug. 11, 2003.

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