Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-03-01
2011-03-01
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045010
Reexamination Certificate
active
07899102
ABSTRACT:
A semiconductor laser including: a nitride III-V compound semiconductor substrate configured to have a first planar area, a second planar area, and a third planar area in a major surface, the first planar area being formed of a C-plane, the second planar area being continuous with the first planar area and being formed of a semipolar plane inclined to the first planar area, the third planar area being continuous with the second planar area and being formed of a C-plane parallel to the first planar area; a first cladding layer configured to be composed of a nitride III-V compound semiconductor on the major surface of the nitride III-V compound semiconductor substrate; an active layer configured to be composed of a nitride III-V compound semiconductor that exists on the first cladding layer and contains In; and a second cladding layer configured to be composed of a nitride III-V compound semiconductor on the active layer.
REFERENCES:
patent: 4948753 (1990-08-01), Yoshikawa et al.
patent: 5932114 (1999-08-01), Makiuchi
patent: 6865203 (2005-03-01), Yoshida et al.
patent: 6984542 (2006-01-01), Yanagisawa et al.
patent: 7011994 (2006-03-01), Yanagisawa et al.
patent: 7120181 (2006-10-01), Hayashi et al.
patent: HEI 07-263798 (1995-10-01), None
patent: 2000-183457 (2000-06-01), None
patent: 2000-277859 (2000-10-01), None
patent: 2001-274514 (2001-10-01), None
patent: 2002-185040 (2002-06-01), None
patent: 2003-10156 (2003-04-01), None
patent: 2003-101156 (2003-04-01), None
patent: 2003-179311 (2003-06-01), None
S. Kicin et al.; Micro-Raman study of InGaP composition grown on V-grooved substrates; Materials Science and Engineering B, vol. 113, p. 111-116 (2004).
H.P. Meier et al.: Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates; Appl. Phys. Lett, 54; p. 433; Jan. 30, 1989.
Anurag Tyagi; Semipolar (1011) InGaN/GaN/GaN Laser Diodes on Bulk GaN Substrates; Japanese Journal of Applied Physics; vol. 46, No. 19; 1007; pp. L444-L445.
Japanese Patent Office, Office Action issued in Patent Application JP 2008-161523, on Mar. 16, 2010.
Harvey Minsun
Nguye Tuan N.
SNR Denton US LLP
Sony Corporation
LandOfFree
Semiconductor laser, method for manufacturing semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser, method for manufacturing semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser, method for manufacturing semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2733410