Semiconductor laser, method for generating laser beam and...

Coherent light generators – Particular beam control device – Tuning

Reexamination Certificate

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C372S045013, C372S050100, C372S050110

Reexamination Certificate

active

08040928

ABSTRACT:
A semiconductor laser is provided capable of generating very narrow laser beams and having stable characteristics, a method for generating the laser beams and a method for reducing a spectral line-width of the laser beams. The semiconductor laser includes a semiconductor active layer, a photonic crystal optical waveguide forming a periodic structure of two-dimensional refractive index within a plane perpendicular to a semiconductor laminate direction directly or indirectly connected to the semiconductor active layer; and an optical cavity that contains the semiconductor active layer and the photonic crystal optical waveguide and oscillates light that is generated from the semiconductor active layer and is guided through the photonic crystal optical waveguide as laser.

REFERENCES:
patent: 7535944 (2009-05-01), Guilfoyle et al.
patent: 2004/0147053 (2004-07-01), Glew et al.
patent: 2007-129028 (2007-05-01), None
patent: 2007-201293 (2007-08-01), None
patent: 2007-220922 (2007-08-01), None
M. Seimetz, “Laser line-width limitations for Optical Systems with High-order Modulation employing Feed Forward Digital Carrier Phase Estimation,” in Proc. Optical Fiber Communication Conference (OFC2008), San Diego, USA, paper OTuM2 (2008).
Kiyota, et al., “Laser and Optical Amplifier using Low Group Velocity Effect of Photonic Crystal Line Defect Waveguide”.
M. Okai, “Corrugation-Pitch-Modulated Corrugation-Pitch-Modulated MQW-DFB Laser with Narrow Spectral line-width (170 kHz),” IEEE Photonics Technol., Lett., vol. 2, No. 8, pp. 529-530, Aug. 1990.
K. Kikuchi, “Coherent Transmission Systems,” European Conference on Optical Communication (ECOC2008), Brussel Belgium, paper Th.2.A.1(2008).

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