Semiconductor laser manufacturing method

Details Semiconductor laser manufacturing method Semiconductor laser manufacturing method

1990-09-20

1992-02-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437160, H01L 21203

Patent

active

050894374

ABSTRACT:
A double heterojunction semiconductor laser according to the invention includes first and third cladding layers sandwiching an active layer. The third cladding layer includes a mesa opposite a light emitting region of the active layer. The mesa is confined by a current blocking layer. A cap layer that is part of the mesa is used as a dopant diffusion source to dope a light emitting region of the active layer heavily. A second cladding layer may be present between the active layer and third cladding layer having the same conductivity type as the third cladding layer adjacent the light emitting region but the opposite conductivity type elsewhere. A semiconductor laser according to the invention may also include a stripe groove structure. The semiconductor lasers include pnpn structures outside the light emitting region and in window structures adjacent the facets of the semiconductor laser for suppressing leakage currents, thereby increasing laser efficiency and reducing threshold current while increasing power output.

REFERENCES:
patent: 3993964 (1976-11-01), Yonezu
patent: 4282494 (1981-08-01), Yonezu et al.
patent: 4983541 (1991-01-01), Kumake
Yonezu et al., "An AlGaAs Window Structure Laser", IEEE Journal of Quantum Electronics, vol. QE-15, 1979, pp. 775-781.
Yang et al., "High-Power Operation . . . (ICPS) Lasers", Electronics Letters, vol. 21, No. 17, 1985, pp. 751-752.
Mawst et al., "Complementary . . . Vapour Deposition", Electronics Letters, vol. 21, No. 20, pp. 903-905.

Affiliated with

Also associated with

Rating

Semiconductor laser manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1823307