Coherent light generators – Particular active media – Semiconductor
Patent
1992-12-28
1994-03-01
Gonzalez, Frank
Coherent light generators
Particular active media
Semiconductor
372 45, 257 78, H01S 318
Patent
active
052915069
ABSTRACT:
A semiconductor laser comprising an active layer in which a biaxial compressive strain is generated, to improve an optical gain. The semiconductor laser has a double-heterostructure comprising an active layer of a (Cd,S)Zn(Se,Te) compound, a pair of cladding layers formed beneath and over the active layer and made of a Zn(Se,Te) compound, and a pair of strained layers formed among the active layer and the cladding layers and made of a (Cd,S)Zn(Se,Te) compound. The strained layers is comprised of a Group II-VI compound semiconductor having lattice constants smaller than and band gaps larger than those of the active layer so that a biaxial compressive strain is induced in the active layer, thereby enabling the optical gain to be improved. It is possible to provide semiconductor lasers which can be practically used at a room temperature.
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Goldstar Co., Ltd
Gonzalez Frank
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