Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-07-05
2005-07-05
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S029000, C438S046000
Reexamination Certificate
active
06913940
ABSTRACT:
A semiconductor laser, for example a Vertical Cavity Surface Emitting Laser (VCSEL), includes one or more photoactive layers to improve the fundamental mode operation of lasing. The photoactive layer(s) provides on-axis current channeling, resulting from the selective drop in resistance around the center of the photoactive layer(s) due to photo-excitation, and counteracts “hole burning” (i.e., carrier depletion) of the center axis region of the VCSEL cylinder. The photoactive layer(s) act as a variable resistivity screen(s) whose radial aperture is controlled by the light itself. The absorption of a small traction of the light intensity suffices for significant on-axis current peaking with minimum efficiency loss and optical mode distortion. Thus, the VCSEL has optically pumped photoactive layers that induce significant, self-regulated, on-axis current channeling and fundamental mode stability at high operation current, improving lasing operation. Photoactive layers may be fabricated using molecular beam epitaxy and do not require wafer post processing.
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Banner & Witcoff , Ltd.
Nguyen Tuan H.
Science Applications International Corporation
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