Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-10-16
2010-12-28
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S050121
Reexamination Certificate
active
07860138
ABSTRACT:
A semiconductor laser device1includes infrared and red laser elements3, 4provided on a substrate2, where the infrared element3includes a laminate of a first lower clad layer11, a first active layer12and a first upper clad layer13, and the red element4includes a laminate of a second lower clad layer21, a second active layer22and a second upper clad layer23. The clad layer11includes a third lower clad layer17formed on the substrate2, an etching stop layer18formed on the third lower clad layer17, and a fourth lower clad layer19formed on the etching stop layer18at a region provided with the infrared element3. The second lower clad layer21is formed on the etching stop layer18except at the region of the infrared element3.
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International Search Report from the corresponding PCT/JP2006/320538, mailed Nov. 7, 2006.
Hamre Schumann Mueller & Larson P.C.
Harvey Minsun
Niu Xnning
Rohm & Co., Ltd.
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