Semiconductor laser light emitting device

Details Semiconductor laser light emitting device Semiconductor laser light emitting device

2005-03-08

2005-03-08

Leung, Quyen (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013

Reexamination Certificate

active

06865203

ABSTRACT:
Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1-xN (0≦x≦1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15<x<0.30, so that the semiconductor laser light emitting device is configured as a weak index type pulsation semiconductor laser light emitting device; or the component ratio “x” of Al is specified at a value in a range of 0≦x≦0.15, so that the semiconductor laser light emitting device is configured as a gain guide type laser light emitting device.

REFERENCES:
patent: 5923690 (1999-07-01), Kume et al.
patent: 09-232680 (1997-09-01), None
patent: 10-093140 (1998-04-01), None
patent: 11204882 (1999-07-01), None

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