Semiconductor laser in the system GaAlInAs

Details Semiconductor laser in the system GaAlInAs Semiconductor laser in the system GaAlInAs

1989-11-02

1991-07-23

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 4, 357 17, H01S 319

Patent

active

050349562

ABSTRACT:
A semiconductor laser on an InP substrate having a first confinement layer and a second confinement layer of (Ga.sub.0.17 Al.sub.0.83).sub.0.48 In.sub.0.52 As and an active layer in quantum well structure having radiation-generating QW-layers of Ga.sub.1-y In.sub.y As.

REFERENCES:
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patent: 4441187 (1984-04-01), Bouley et al.
patent: 4479222 (1984-10-01), Hawrylo
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4599728 (1986-07-01), Alavi et al.
patent: 4611328 (1986-09-01), Liu et al.
"Low Threshold Current . . . Ridge MQw Lasers with InP Cladding Layers", by Y. Kawamura et al, Electronic Letters, vol. 24, No. 10, May 12, 1988, pp. 637-638.
"Low Internal Loss Separate Confinement Heterostructure InGaAs/InGaAsP Quantum Well Laser", by U. Koren et al, Appl. Phys. Letter 51 (21), Nov. 23, 1987, pp. 1744-1746.
"Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE", by Tsuguo Inata et al, Japanese Journal of Applied Physics, vol. 25, No. 12, Dec. 1986, pp. L983-L985.
"New Current Injection . . . Double-Heterostructure Laser Grown by Molecular Beam Epitaxy", by W. T. Tsang et al, Appl. Phys. Letter 42 (11), Jun. 1, 1983, pp. 922-924.
"Si-Induced Disordering of . . . Multiquantum Well Structures", by Takeo Miyazawa, et al, Japanese Journal of Applied Physics, vol. 27, No. 9, Sep. 1988, pp. L1731-L1733.
"InGaAs/InGaAlAs/InAlAs/InP SCH-MQW Laser Diodes Grown by Molecular-Beam Epitaxy", by Y. Kawamura et al, Electronic Letters, May 24, 1984, vol. 20, No. 11, pp. 459-460.
"Optically Pumped . . . Double Heterostructure . . . As Lasers Grown by Molecular Beam Epitaxy" by K. Alavi et al, Appl. Phys. Letter 42 (3), Feb. 1, 1983, pp. 254-256.
"Room Temperature CW Operation of MBE-Grown GaInAs/AlInAs MQW Lasers In . . . Range", by Y. Matsushima et al, Electronics Letters, vol. 23, No. 24, Nov. 19, 1987, pp. 1271-1273.
"AlGaInAs/InP Double Heterostructure Lasers Grown by Low-Pressure Metal Organic Vapor Phase Epitaxy for Emission at 1300 nm.", by Davies et al, Elec. Ltrs., vol. 24, No. 12, Jun. 9, 1988, pp. 732-733.
"Alo.48Ino.52As/Gao.47Ino.53As/Al0.48In0.52 As Double-Heterostructure Lasers Grown by Molecular-Beam Epitaxy with Lasing . . . ", by W. T. Tsang, J. Appl. Phys. 52(6), Jun. 1981, pp. 3861-3864.

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