Semiconductor laser having stacked active layers with reduced dr

Details Semiconductor laser having stacked active layers with reduced dr Semiconductor laser having stacked active layers with reduced dr

1994-09-23

1995-09-19

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

054523168

ABSTRACT:
A semiconductor laser includes a first one-conductive type clad layer, a first active layer, a second other-conductive type clad layer, a third one-conductive type clad layer, a second active layer, and a fourth other-conductive type clad layer stacked in sequence. Either the second other-conductive type clad layer or the third one-conductive type clad layer has a thickness smaller than the thickness of a depletion layer of the p-n junction grown at the boundary between the second other-conductive type clad layer and the third one-conductive type clad layer when voltage is applied across the first one-conductive type clad layer and the fourth other-conductive type clad layer.

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Applied Physics Letters, vol. 41, No. 6, 15 Sep. 1982, New York, U.S. pp. 499-501 "Integrated Multilayer GaAs Lasers Separated by Tunnel Junctions".
Suda et al, IEEE T.E.D. "Transient Analysis of p-n-p-n Optoelectronic Devices" vol. 39 No. 8 Aug. 1992 pp. 1858-1864.
Lockwood et al, IEEE J.Q.E. "The GaAs P-N-P-N Laser Diode", vol. QE-10 No. 7, Jul. 1974.
J. Katz, et al., "Large Optical Cavity A1GaAs Injection Lasers With Multiple Active Regions", Journal of Applied Physics, vol. 51, No. 8, Aug. 1980, Woodbury, US, pp. 4038-4041.

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