Semiconductor laser having optical guide layer doped for...

Details Semiconductor laser having optical guide layer doped for... Semiconductor laser having optical guide layer doped for...

2007-11-13

2007-11-13

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

11386717

ABSTRACT:
In a semiconductor laser element: a lower cladding layer of a first conductivity type, a quantum-well active layer, an upper cladding layer of a second conductivity type, a contact layer of the second conductivity type, and a first electrode of the second conductivity type are formed in this order above a surface of a semiconductor substrate of the first conductivity type, and a second electrode of the first conductivity type is formed below the lower cladding layer. An optical guide layer is arranged between the quantum-well active layer and one or each of the lower cladding layer and the upper cladding layer. The whole or a portion of the optical guide layer contains a dopant so as to realize a carrier concentration of 3.0×1017cm−3or higher.

REFERENCES:
patent: 5345463 (1994-09-01), Mannoh et al.
patent: 6798808 (2004-09-01), Konushi et al.

Affiliated with

Also associated with

Rating

Semiconductor laser having optical guide layer doped for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser having optical guide layer doped for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser having optical guide layer doped for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3852038