Semiconductor laser having low current threshold

Details Semiconductor laser having low current threshold Semiconductor laser having low current threshold

1994-02-14

1996-04-02

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 318

Patent

active

055047696

ABSTRACT:
A semiconductor laser including a substrate, means for reducing the lateral current flow and means forming the active elements, wherein said means for reducing the lateral current flow are composed by at least three layers of which the external ones are entirely doped and the internal layers are doped only in the zones lateral to the active element so that these layers reduce the side current flow.

REFERENCES:
patent: 4644552 (1987-02-01), Ohshima et al.
patent: 5048038 (1991-09-01), Brennan et al.
patent: 5151914 (1992-09-01), Vidimari et al.
patent: 5193098 (1993-03-01), Welch et al.
"Implanted-Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure Laser in GaAs/AlGaAs" by. Vawter et al, Jul. 1989 IEEE Log Number 8929429, pp. 153-155.
Patent Abstracts of Japan, vol. 6, No. 140 (E-121) (1018) 29 Jul. 1982 & JP-A-57 063 882 (Nippon Denki) 17 Apr. 1982.
Patent Abstracts of Japan, vol. 7, No. 84 (E-168) (1229) 8 Apr. 1983 & JP-A-58 010 884 (Nippon Denki) 21 Jan 1983.

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