Semiconductor laser having double heterostructure and method of

Details Semiconductor laser having double heterostructure and method of Semiconductor laser having double heterostructure and method of

1992-06-04

1993-04-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 148DIG95, 372 46, 257 79, H01L 21208

Patent

active

052022854

ABSTRACT:
A semiconductor laser includes a substrate having a (100) face as its main surface, where the substrate has a stripe of a first mesa extending in a <110> direction of the substrate and including a (111)B face as its sloping surface, a buried layer formed on the substrate excluding a top surface of the stripe of the first mesa so that the (111)B face of the stripe of the first mesa is covered a sloping surface part of the buried layer, where the top surface of the stripe of the first mesa is the (100) face of the substrate and forms a stripe of a second mesa together with the sloping surface of the buried layer and the stripe of the second mesa has a smaller inclination than the stripe of the first mesa, and a double heterostructure made up of a plurality of semiconductor layers and formed on the stripe of the second mesa. The double heterostructure has a substantially trapezoidal cross section which is determined by the stripe of the second mesa.

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Kenneth M. Dzurko et al, "Low Threshold Quantum Well Lasers Grown by Metalorganic Chemical Vapor Deposition on Nonplanar Substrates", IEEE Journal of Quantum Electronics. New York: Jun. 1989.

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