Coherent light generators – Particular active media – Semiconductor
Patent
1992-12-24
1993-10-19
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
052552810
ABSTRACT:
A semiconductor laser includes a substrate having a (100) face as its main surface, where the substrate has a stripe of a first mesa extending in a <110> direction of the substrate and including a (111)B face as its sloping surface, a buried layer formed on the substrate excluding a top surface of the stripe of the first mesa so that the (111)B face of the stripe of the first mesa is covered a sloping surface part of the buried layer, where the top surface of the stripe of the first mesa is the (100) face of the substrate and forms a stripe of a second mesa together with the sloping surface of the buried layer and the stripe of the second mesa has a smaller inclination than the stripe of the first mesa, and a double heterostructure made up of a plurality of semiconductor layers and formed on the stripe of the second mesa. The double heterostructure has a substantially trapezoidal cross section which is determined by the stripe of the second mesa.
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Anayama Chikashi
Furuya Akira
Kondo Makoto
Sugano Mami
Tanahashi Toshiyuki
Epps Georgia Y.
Fujitsu Limited
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