Semiconductor laser having at least two radiation beams, and met

Details Semiconductor laser having at least two radiation beams, and met Semiconductor laser having at least two radiation beams, and met

1982-02-25

1984-10-09

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 47, H01S 319

Patent

active

044765630

ABSTRACT:
A semiconductor laser device has a semiconductor body in which two or more lasers are provided which can generate substantially parallel radiation beams of preferably different frequencies which are situated close together. According to the invention, the semiconductor body has at least one semiconductor laser of the double hetero-junction type (DH-type) comprising a plurality of semiconductor layers with a radiating p-n junction parallel to the semiconductor layers and at least one semiconductor laser of the TJS ("Transverse Junction Stripe") type, the p-n junction surface of which is transverse to that of the DH-laser. The device comprises a layer structure having at least two active layers, each between two passive layers. One laser is formed in a mesa-shaped part of the body which comprises both active layers, the other in an adjacent part in which the uppermost active layer is absent. The TJS-laser is preferably provided in the last-mentioned part. More than two lasers may also be provided.

REFERENCES:
patent: 3961996 (1976-06-01), Namizaki et al.
patent: 4280108 (1981-07-01), Scifres et al.
patent: 4318059 (1982-03-01), Lang et al.
Sakai et al., "Dual Wavelength InGaAsP/InP TJS Lasers", Electronics Letters, vol. 18, No. 1, pp. 18-20, Jan. 7, 1982.

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