Semiconductor laser having an optical waveguide layer including

Details Semiconductor laser having an optical waveguide layer including Semiconductor laser having an optical waveguide layer including

1991-09-18

1994-01-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

052766985

ABSTRACT:
A semiconductor laser comprises an optical wave guide layer including an AlGaInP active layer and AlGaInP optical confinement layers holding the active layer therebetween. A well structure of an energy band is formed and a compressive stress is applied to the activation layer by the difference between the compositions of the activation layer and the optical confinement layers. Since the compressive stress is applied to the activation layer, the oscillation threshold is lower than that of an un-strained device. Accordingly, the rise of the oscillation threshold due to the addition of Al is compensated and continuous oscillation at room temperature is attained and visible light having a wavelength of 0.67 .mu.m or lower, which has been difficult to attain in the past, is produced. The semiconductor laser having a multi-quantum well structure is manufactured by using AlGaInP or GaInP as a semiconductor material of the multi-quantum well structure and epitaxially growing by periodically changing a supply rate of only In. Through a very simple method of periodically changing the supply rate of only In, a well layer having a compressive stress applied thereto and a barrier layer having a tensile stress applied thereto are alternately grown and the activation layer having the desired strained multi-quantum well structure is produced.

REFERENCES:
patent: 5034957 (1991-07-01), Ohba et al.
E. Yablonovitch et al., "Reduction of Lasing Threshold Current Density by the Lowering of Valence Band Effective Mass", Journal of Lightwave Technology, vol. LT-4, No. 5, May 1986, pp. 504-506.
A. Valster et al., "Low Threshold Current Density (760 A/cm.sup.2) and High Power (45 mW) Operation of Strained Ga.sub.0.42 In.sub.0.58 P Multiquantum Well Laser Diodes Emitting at 632 nm," Electronics Letters, Jan. 16, 1992, vol. 28, No. 2, pp. 144-145.
Katsuyama et al., "Very Low Threshold Current AlGainP/Ga.sub.x In.sub.1-x P Strained Single Quantum Well Visible Laser Diode", Electronics Letters, vol. 26, No. 17, Aug. 1990, Stevenage, Herts., GB, pp. 1375-1377.
Fletcher et al., "CW Room Temperature Operation (<640 nm) of AlGaInP Multi-quantum-well Lasers", Proceedings of 15th International Symposium in Gallium Arsenide and Related Compounds, pp. 563-566, 1988.
Kawata et al., "Room-temperature, continuous-wave operation for mode-stabilised AlGaInP with a multiquantum-well active layer", Electronics Letters, vol. 24, No. 24, Nov. 1988, pp. 1489-1490.
Nam et al., "Short-wavelength (.about.625 nm) room-temperature continuous laser operation of In.sub.0.5 (Al.sub.x Ga.sub.1-x).sub.0.5 P Quantum Well Heterostructures", Applied Physics Letters, vol. 52, No. 16, Apr. 1988, pp. 1329-1331.

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