Semiconductor laser having an inverted layer in a plurality of s

Details Semiconductor laser having an inverted layer in a plurality of s Semiconductor laser having an inverted layer in a plurality of s

1983-08-16

1986-02-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 47, 372 50, H01S 319

Patent

active

045717290

ABSTRACT:
A semiconductor crystal comprises a plurality of double heterojunction constructions in which layers of semiconductors of the same conductive type are laminated. The plurality of double heterojunction constructions are formed with step differential portion by step portion. In the step differential portion, active layers which constitute a plurality of double heterojunction constructions are laterally formed with PN junction portions which provide laser oscillation. The PN junction portions are formed from an inverted layer in which a conductive body of a second type is diffused over an area on the surface of the semiconductor crystal to the step differential portion. Carrier injection electrodes formed on both surfaces of the semiconductor crystal may either cover the entire surface of both the surfaces of the crystal or be formed as parallel stripes in which carrier injection electrodes on at least one surface side are disposed at required lateral intervals. The plurality of PN junction portions are designed so that a photowave is shifted from one to other between the adjacent PN junction portions, and are set to a state slightly smaller than the laser oscillation threshold value.

REFERENCES:
patent: 4318059 (1982-03-01), Lang et al.
patent: 4347611 (1982-08-01), Seifres et al.
patent: 4456999 (1984-06-01), Sugino et al.

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