Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-10-30
2007-10-30
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045010
Reexamination Certificate
active
11550841
ABSTRACT:
An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially stacked on an n-type GaAs substrate. The thickness of each of the first guide layer and the second guide layer is 100 nm or more. In such a semiconductor laser, the difference between the Eg (band gap energy) of the first guide layer and the Eg of the active layer (or the difference between the Eg of the second guide layer and the Eg of the active layer) is made 0.66 times or less of the difference between the Eg of the first cladding layer and the Eg of the active layer (or the difference between the Eg of the second cladding layer and the Eg of the active layer).
REFERENCES:
patent: 2004-63537 (2004-02-01), None
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K. S. Chan, et al.; “Optical Gain of Interdiffused InGaAs-GaAs and AlGaAs-GaAs Quantum Wells”,IEEE J. of Quantum Electronics, vol. 34, No. 1, pp. 157-165, (Jan. 1998).
Kenichi Iga; “Semiconductor Laser”,Applied Physics Series(Specialist Course), edited by the Japan Society of Applied Physics, Ohmsha, Ltd., pp. 41 (1994).
Z. C Feng, et al.; “Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition”,J. of Applied Physics, vol. 85, No. 7, pp. 3824-3831, (Apr. 1999).
Hanamaki Yoshihiko
Kawasaki Kazushige
Shibata Kimitaka
Shigihara Kimio
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
Rodriguez Armando
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