Semiconductor laser having an improved stacked structure

Details Semiconductor laser having an improved stacked structure Semiconductor laser having an improved stacked structure

2007-10-30

2007-10-30

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

11550841

ABSTRACT:
An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially stacked on an n-type GaAs substrate. The thickness of each of the first guide layer and the second guide layer is 100 nm or more. In such a semiconductor laser, the difference between the Eg (band gap energy) of the first guide layer and the Eg of the active layer (or the difference between the Eg of the second guide layer and the Eg of the active layer) is made 0.66 times or less of the difference between the Eg of the first cladding layer and the Eg of the active layer (or the difference between the Eg of the second cladding layer and the Eg of the active layer).

REFERENCES:
patent: 2004-63537 (2004-02-01), None
D. Botez, et al.; “66% CW wallplug efficiency from Al-free 0.98 μm-emitting diode lasers”,Electronics Letters, vol. 32, No. 21, pp. 2012-2013, (Oct. 10, 1996).
K. S. Chan, et al.; “Optical Gain of Interdiffused InGaAs-GaAs and AlGaAs-GaAs Quantum Wells”,IEEE J. of Quantum Electronics, vol. 34, No. 1, pp. 157-165, (Jan. 1998).
Kenichi Iga; “Semiconductor Laser”,Applied Physics Series(Specialist Course), edited by the Japan Society of Applied Physics, Ohmsha, Ltd., pp. 41 (1994).
Z. C Feng, et al.; “Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition”,J. of Applied Physics, vol. 85, No. 7, pp. 3824-3831, (Apr. 1999).

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