Semiconductor laser having an etched mirror and a narrow stripe

Details Semiconductor laser having an etched mirror and a narrow stripe Semiconductor laser having an etched mirror and a narrow stripe

1982-08-16

1984-09-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 19, H01S 319

Patent

active

044701438

ABSTRACT:
In an integrated optical semiconductor device wherein a stripe geometry laser diode is separated from a photodetector by an etched groove, the stripe region has a smaller width, such as 2 to 3 microns, than a carrier generating region of the photodetector. The stripe region is preferably rendered thicker than the carrier generating region, in which case the carrier generating region is more preferably made of a seimconductor material having a narrower band gap than the material of the stripe region. The stripe region may be defined by a buried mesa structure. Alternatively, the stripe region may be bounded transversely of a pair of heterojunctions therefor by a pair of channel-shaped regions of a semiconductor material having a wider bank gap than the material of the stripe region. In this event, the carrier generating region is divided into three parts by extensions of the channel-shaped regions. Most preferably, the carrier generating region has a light receiving end which is not parallel to a light emitting end of the stripe region. The light receiving end may be cylindrical.

REFERENCES:
patent: 4136928 (1979-01-01), Logan et al.
patent: 4274104 (1981-06-01), Fang et al.
patent: 4275404 (1981-06-01), Cassiday et al.
Iga et al., "GaInAsP/InP Laser with Monolithically Integrated Monitoring Detector", Electronics Letters, vol. 15, No. 9, Apr. 24, 1980, pp. 342-343.

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