Coherent light generators – Particular active media – Semiconductor
Patent
1994-12-22
1996-02-27
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 44, 372 50, 372 92, H01S 319
Patent
active
054954924
ABSTRACT:
A semiconductor laser including a semiconductor substrate, having first and second cladding layers thereon semiconductor substrate, and an active layer sandwiched between the first and second cladding layers. The active layer has on one end a convex first resonating surface and on the other end a concave second resonating surface. The first and second resonating end surfaces of the active layer are parallel to each other, and a portion of the length of the first resonating end surface is greater than a portion of the length of S2 of the second resonating end surface corresponding to the former.
REFERENCES:
patent: 4675877 (1987-06-01), Svilans
patent: 4720468 (1988-01-01), Menigaux et al.
patent: 4780879 (1988-10-01), Chinone et al.
patent: 4783788 (1988-11-01), Gordon
patent: 4791648 (1988-12-01), Vojak et al.
patent: 4942585 (1990-07-01), Ungar
patent: 5032879 (1991-07-01), Buchmann et al.
patent: 5115443 (1992-05-01), Miyazawa
patent: 5179566 (1993-01-01), Iwano et al.
Abstract of Japanese Patent Application 54-14769, Takamiya et al., Nov. 4, 1980.
Cook et al, "Gain-induced Guiding and Astigmatic Output Beam of GaAs Lasers", Journal of Applied Physics, vol. 46, No. 4, Apr. 1975, pp. 1660-1672.
Bovernick Rodney B.
Sanghavi Hemang
Sony Corporation
LandOfFree
Semiconductor laser having an active layer with a fan-shaped str does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser having an active layer with a fan-shaped str, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser having an active layer with a fan-shaped str will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1684511