Semiconductor laser having an active layer buried in a groove

Details Semiconductor laser having an active layer buried in a groove Semiconductor laser having an active layer buried in a groove

1985-10-24

1988-02-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

047232510

ABSTRACT:
A semiconductor laser device in which the thickness and position of an active layer grown in a groove are made more controllable. The inventive device includes a buffer layer of a first conductivity type formed on a semiconductor substrate of the same conductivity type, a first current blocking layer of a second conductivity type formed over the first buffer layer, the aforementioned groove being formed through the first and current blocking layer to the buffer layer, the active layer buried in the groove, and mesas formed on both side of the groove. With this structure, during crystal growth of the active layer, atoms which would otherwise diffuse into the groove and make it difficult to control the thickness and position of the active layer diffuse into portions outside the mesas and grow thereon.

REFERENCES:
patent: 4317085 (1982-02-01), Burnham et al.

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